Thermoelectrical properties of Graphene

  • This study aims to analyze the electrical conductivity properties and thermopower of monolayer and bilayer graphene. After an experimental and theoretical introduction to the effect of thermopower in graphene, we aim to explain the divergence between experiment and theory for thermopower in bilayer graphene in the first part of this work. Several approaches are presented; an extended Mott normalism, diagrammatic calculations in the linear response framework and Boltzmann equation calculations. A comparison of these approaches is provided. These approaches take into account both the diffusion of the electrons as well as electron phonon interaction with a particular focus on the phonon drag component. Within these calculations the detailed analysis of the phonon bath turns out to be of key importance. Therefore, the contribution of phonon-phonon interaction, phonon-boundary interaction and phonon-impurity interaction is examined in detail. Furthermore, the results are compared to competing theories such as the balance equations theory, as well as to other systems, and finally to experimental results. In the second part the quantum corrections to the conductivity and the thermopower in monolayer graphene are studied numerically and analytically. First, we use the recursive Green’s function method to numerically calculate the conductivity and the thermopower of graphene. For conductivity, we obtain changes between weak antilocalization to weak localization as a function of the system’s parameters, namely the correlation strength of the impurities, the width and concentration of the impurities and the Fermi energy of the system. In addition, we find an increase of the quantum correction to the thermopower, and thereby magneto thermopower, which depends on the same parameters weak localization corrections to the conductivity. We analytically reproduce the known results for the conductivity, linking them to the same parameters that we tuned in the numerical calculation.

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Publishing Institution:IRC-Library, Information Resource Center der Jacobs University Bremen
Granting Institution:Jacobs Univ.
Author:Aleksander Hinz
Referee:Stefan Kettemann, Hildegard Meyer-Ortmanns, Eduardo Mucciolo, Thomas Heine
Advisor:Stefan Kettemann
Persistent Identifier (URN):urn:nbn:de:gbv:579-opus-1002991
Document Type:PhD Thesis
Language:English
Date of Successful Oral Defense:2013/06/04
Year of Completion:2013
Date of First Publication:2013/08/23
PhD Degree:Physics
School:SES School of Engineering and Science
Library of Congress Classification:Q Science / QC Physics / QC501-766 Electricity and magnetism / QC501-721 Electricity / QC601-625 Electric current / QC610.3-QC612 Electric conductivity / QC610.9-611.8 Semiconductor physics / QC611.8 Specific semiconducting substances and types, A-Z / QC611.8.L68 Low-dimensional semiconductors
Call No:Thesis 2013/20

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